- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 5817SMJ/TR13 | DIODE SCHOTTKY 20V 1A DO214AA | Microsemi Corporation | DO-214AA, SMB | 1A | Schottky | Surface Mount | DO-214AA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 450mV @ 1A | 20V | -55°C ~ 150°C | |||||
| UPDS5100H | DIODE SCHOTTKY 100V 5A POWERDI5 | Microsemi Corporation | PowerDI™ 5 | 5A | Schottky | Surface Mount | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 100V | 710mV @ 5A | 100V | |||||||
| S2120 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| 1N6547 | DIODE RECT ULT FAST REC A-PKG | Microsemi Corporation | |||||||||||||||
| JANTX1N6629 | DIODE GEN PURP 880V 1.4A | Microsemi Corporation | E, Axial | 1.4A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 880V | 40pF @ 10V, 1MHz | 1.4V @ 1.4A | 880V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |||
| 1N4534UR | DIODE SWITCHING | Microsemi Corporation | |||||||||||||||
| CDLL5819E3 | DIODE SCHOTTKY 45V 1A DO213AB | Microsemi Corporation | DO-213AB, MELF (Glass) | 1A | Schottky | Surface Mount | DO-213AB | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 70pF @ 5V, 1MHz | 490mV @ 1A | 45V | -65°C ~ 125°C | ||||
| APT10SCD120BCT | DIODE SCHOTTKY 1.2KV 36A TO247 | Microsemi Corporation | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247 | No Recovery Time > 500mA (Io) | 200µA @ 1200V | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 150°C | 1 Pair Common Cathode | 36A (DC) | |||
| R42120F | RECTIFIER | Microsemi Corporation | |||||||||||||||
| JAN1N6639 | DIODE GEN PURP 75V 300MA AXIAL | Microsemi Corporation | D, Axial | 300mA | Standard | Through Hole | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 75V | 1.2V @ 300mA | 75V | 4ns | -65°C ~ 175°C | Military, MIL-PRF-19500/609 | |||
| JAN1N5623US | DIODE GEN PURP 1KV 1A D5A | Microsemi Corporation | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 1000V | 15pF @ 12V, 1MHz | 1.6V @ 3A | 1000V | 500ns | -65°C ~ 175°C | Military, MIL-PRF-19500/429 | ||
| JANTX1N1206AR | RECTIFIER | Microsemi Corporation | |||||||||||||||
| MS106E3/TR8 | DIODE SCHOTTKY 60V 1A DO204AL | Microsemi Corporation | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 60V | 690mV @ 1A | 60V | -55°C ~ 175°C | |||||
| JANTX1N485B | DIODE GEN PURP 180V 200MA DO35 | Microsemi Corporation | DO-204AH, DO-35, Axial | 200mA (DC) | Standard | Through Hole | DO-35 | Small Signal =< 200mA (Io), Any Speed | 25nA @ 180V | 1V @ 100mA | 180V | -65°C ~ 175°C | Military, MIL-PRF-19500/118 | ||||
| 1N5615US/TR | UFR,FRR | Microsemi Corporation | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 200V | 45pF @ 12V, 1MHz | 1.6V @ 3A | 200V | 150ns | -65°C ~ 175°C |
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