• Manufacturer
  • Current - Average Rectified (Io)
Found: 3029
  • DIODE SCHOTTKY 20V 1A DO214AA
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: DO-214AA, SMB
    • Supplier Device Package: DO-214AA
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 20V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE SCHOTTKY 100V 5A POWERDI5
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: PowerDI™ 5
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 5A
    • Voltage - Forward (Vf) (Max) @ If: 710mV @ 5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 100V
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  • RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE RECT ULT FAST REC A-PKG
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE GEN PURP 880V 1.4A
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 880V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 2µA @ 880V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE SWITCHING
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE SCHOTTKY 45V 1A DO213AB
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: DO-213AB, MELF (Glass)
    • Supplier Device Package: DO-213AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 45V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 50µA @ 45V
    • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 125°C
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  • DIODE SCHOTTKY 1.2KV 36A TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 36A (DC)
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  • RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE GEN PURP 75V 300MA AXIAL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/609
    • Mounting Type: Through Hole
    • Package / Case: D, Axial
    • Supplier Device Package: D-5D
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 75V
    • Current - Average Rectified (Io): 300mA
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 100nA @ 75V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • DIODE GEN PURP 1KV 1A D5A
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/429
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 500nA @ 1000V
    • Capacitance @ Vr, F: 15pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
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  • DIODE SCHOTTKY 60V 1A DO204AL
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-204AL (DO-41)
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 60V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 60V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 180V 200MA DO35
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/118
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 180V
    • Current - Average Rectified (Io): 200mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 25nA @ 180V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • UFR,FRR
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: D-5A
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 500nA @ 200V
    • Capacitance @ Vr, F: 45pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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