-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LXS301-23-0/TR | SI SCHOTTKY NON HERMETIC PLASTIC | Microchip Technology | TO-236-3, SC-59, SOT-23-3 | 1A (DC) | Schottky | Surface Mount | SOT-23-3 | Fast Recovery =< 500ns, > 200mA (Io) | 200nA @ 15V | 1.4pF @ 0V, 1MHz | 430mV @ 1mA | 20V | -55°C ~ 125°C | |
| LXS201-143-5 | SI SCHOTTKY NON HERMETIC PLASTIC | Microchip Technology | TO-236-3, SC-59, SOT-23-3 | 1A (DC) | Schottky | Surface Mount | SOT-23-3 | Fast Recovery =< 500ns, > 200mA (Io) | 400nA @ 1V | 0.3pF @ 0V, 1MHz | 350mV @ 1mA | 3V | -55°C ~ 125°C | |
| LXS101-23-0/TR | SI SCHOTTKY NON HERMETIC PLASTIC | Microchip Technology | TO-236-3, SC-59, SOT-23-3 | 1A (DC) | Schottky | Surface Mount | SOT-23-3 | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 1V | 1pF @ 0V, 1MHz | 350mV @ 1mA | 8V | -55°C ~ 125°C | |
| LXS101-23-0 | SI SCHOTTKY NON HERMETIC PLASTIC | Microchip Technology | TO-236-3, SC-59, SOT-23-3 | 1A (DC) | Schottky | Surface Mount | SOT-23-3 | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 1V | 1pF @ 0V, 1MHz | 350mV @ 1mA | 8V | -55°C ~ 125°C | |
| 1N6536 | DIODE GEN PURP 400V 1A A AXIAL | Microchip Technology | A, Axial | 1A (DC) | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 400V | 1.5V @ 1A | 400V | 30ns |
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