-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GC9700-150E | SI SCHOTTKY NON HERMETIC EPSM SM | Microchip Technology | Die | 15mA (DC) | Schottky | Surface Mount | Chip | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 2.1pF @ 0V, 1MHz | 430mV @ 1mA | 70V | -55°C ~ 150°C |
GC9700-150A | SI SCHOTTKY NON HERMETIC EPSM SM | Microchip Technology | Die | 15mA (DC) | Schottky | Surface Mount | Chip | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 2.1pF @ 0V, 1MHz | 430mV @ 1mA | 70V | -55°C ~ 150°C |
GC9700-00 | SI SCHOTTKY NON HERMETIC CHIP | Microchip Technology | Die | 15mA (DC) | Schottky | Surface Mount | Chip | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 2.1pF @ 0V, 1MHz | 430mV @ 1mA | 70V | -55°C ~ 150°C |
- 10
- 15
- 50
- 100