-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N3595-1 | DIODE GEN PURP 125V 150MA DO204 | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | Military, MIL-PRF-19500/241 | ||
| 1N3595UR-1/TR | SIGNAL/COMPUTER DIODE | Microchip Technology | DO-213AA | 150mA (DC) | Standard | Surface Mount | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | ||
| 1N3595-1/TR | SIGNAL/COMPUTER DIODE | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | DO-35 | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | ||
| JAN1N4153-1 | DIODE GEN PURP 75V 150MA DO35 | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | DO-35 | Small Signal =< 200mA (Io), Any Speed | 50nA @ 50V | 2pF @ 0V, 1MHz | 880mV @ 20mA | 75V | 4ns | -65°C ~ 175°C | Military, MIL-PRF-19500/337 |
| JAN1N3595-1/TR | SIGNAL/COMPUTER DIODE | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | Military, MIL-PRF-19500/241 | |
| 1N3595-1 | DIODE GEN PURP 125V 150MA DO35 | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | DO-35 | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | ||
| 1N3595UR-1 | DIODE GEN PURP 125V 150MA DO213 | Microchip Technology | DO-213AA | 150mA (DC) | Standard | Surface Mount | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | ||
| JAN1N3595-1 | DIODE GEN PURP 125V 150MA DO35 | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | Military, MIL-PRF-19500/241 | |
| JANTXV1N3595-1/TR | SIGNAL/COMPUTER DIODE | Microchip Technology | DO-204AH, DO-35, Axial | 150mA (DC) | Standard | Through Hole | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | 125V | 3µs | -65°C ~ 175°C | Military, MIL-PRF-19500/241 |
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