Semiconductors, Diodes, Diodes - Rectifiers - Arrays Microchip Technology 1.3A

Found: 15
  • RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 150V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 150V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 150V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 50V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 50V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 1µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 50V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: A-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 50V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 150V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 1µA @ 150V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 100V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: A-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 100V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 150V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 150V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 150V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Supplier Device Package: A-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 150V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 100V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 1µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 155°C
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  • DIODE GEN PURP 100V 1.3A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/503
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1.3A
    • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 155°C
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