-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| E1780TG65E | DIODE GEN PURP 3.6KV 1780A - | IXYS | TO-200AF | 1780A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 3600V | 3.83 V @ 1.78 kA | 3600V | 1.22µs | -40°C ~ 140°C | SONIC-FRD™ |
- 10
- 15
- 50
- 100