-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH16G65C5XKSA2 | DIODE SCHOTKY 650V 16A TO220-2-1 | Infineon Technologies | TO-220-2 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-1 | No Recovery Time > 500mA (Io) | 200µA @ 650V | 470pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDW32G65C5BXKSA2 | DIODE SCHOTTKY 650V 16A TO247-3 | Infineon Technologies | TO-247-3 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3 | No Recovery Time > 500mA (Io) | 200µA @ 650V | 470pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDW16G65C5FKSA1 | DIODE SCHOTTKY 650V 16A TO247-3 | Infineon Technologies | TO-247-3 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3-1 | No Recovery Time > 500mA (Io) | 600µA @ 650V | 470pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDH16G65C5XKSA1 | DIODE SCHOTTKY 650V 16A TO220-2 | Infineon Technologies | TO-220-2 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 550µA @ 650V | 470pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDH16G120C5XKSA1 | DIODE SCHOT 1200V 16A TO220-2-1 | Infineon Technologies | TO-220-2 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-1 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 730pF @ 1V, 1MHz | 1.95V @ 16A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDH16S60CAKSA1 | SIC DIODES | Infineon Technologies | TO-220-2 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 200µA @ 600V | 650pF @ 1V, 1MHz | 1.7V @ 16A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDH06G65C6XKSA1 | DIODE SCHOTTKY 650V 16A TO220-2 | Infineon Technologies | TO-220-2 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2 | No Recovery Time > 500mA (Io) | 20µA @ 420V | 302pF @ 1V, 1MHz | 1.35V @ 6A | 650V | 0ns | -55°C ~ 175°C | |
| AIDW16S65C5XKSA1 | DIODE SCHOTTKY 650V 16A TO247 | Infineon Technologies | TO-247-3 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3-41 | No Recovery Time > 500mA (Io) | 90µA @ 650V | 471pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -40°C ~ 175°C | Automotive, AEC-Q100/101, CoolSiC™ |
| IDW16G65C5XKSA1 | DIODE SCHOTTKY 650V 16A TO247-3 | Infineon Technologies | TO-247-3 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3 | No Recovery Time > 500mA (Io) | 200µA @ 650V | 470pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
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