Semiconductors, Diodes, Diodes - Rectifiers - Arrays Infineon Technologies 15A

Found: 6
  • DIODE GEN PURP 650V 15A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 47ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE GEN PURP 600V 15A TO247AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFRED®
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247AC Modified
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 1.2KV 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 2.05V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 3.5µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE GEN PURP 650V 15A TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 47ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • DIODE GEN PURP 600V 15A TO220AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFRED®
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 650V 15A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 15A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 114ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
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