-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDP06E60 | DIODE GEN PURP 600V 14.7A TO220 | Infineon Technologies | TO-220-2 | 14.7A (DC) | Standard | Through Hole | PG-TO220-2-2 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2V @ 6A | 600V | 70ns | -55°C ~ 175°C |
| IDD06E60BUMA1 | DIODE GEN PURP 600V 14.7A TO252 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14.7A (DC) | Standard | Surface Mount | PG-TO252-3-1 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2V @ 6A | 600V | 70ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100