-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDL12G65C5XUMA2 | DIODE SCHOTTKY 650V 12A VSON-4 | Infineon Technologies | 4-PowerTSFN | 12A (DC) | Silicon Carbide Schottky | Surface Mount | PG-VSON-4 | No Recovery Time > 500mA (Io) | 190µA @ 650V | 360pF @ 1V, 1MHz | 1.7V @ 12A | 650V | 0ns | -55°C ~ 150°C | CoolSiC™+ |
| IDK12G65C5XTMA2 | DIODE SCHOTTKY 650V 12A TO263-2 | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 12A (DC) | Silicon Carbide Schottky | Surface Mount | PG-TO263-2 | No Recovery Time > 500mA (Io) | 360pF @ 1V, 1MHz | 1.8V @ 12A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ | |
| IDW24G65C5BXKSA2 | DIODE SCHOTTKY 650V 12A TO247-3 | Infineon Technologies | TO-247-3 | 12A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3 | No Recovery Time > 500mA (Io) | 190µA @ 650V | 360pF @ 1V, 1MHz | 1.7V @ 12A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
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