Semiconductors, Diodes, Diodes - Rectifiers - Arrays Infineon Technologies 12A (DC)
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- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 190µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 190µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 160µA @ 600V
- Capacitance @ Vr, F: 530pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 400µA @ 600V
- Capacitance @ Vr, F: 450pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 500µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 190µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 2.1mA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: Automotive, AEC-Q100/101, CoolSiC™
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 70µA @ 650V
- Capacitance @ Vr, F: 363pF @ 1V, 1MHz
- Operating Temperature - Junction: -40°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 500µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 14µA @ 420V
- Capacitance @ Vr, F: 205pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: PG-VSON-4
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 190µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100