Semiconductors, Diodes, Diodes - Rectifiers - Arrays Infineon Technologies 1100A

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 5
  • DZ1070N18KHPSA3
    DIODE GEN PURP 1.8KV 1100A MOD
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1800V
    • Current - Average Rectified (Io): 1100A
    • Voltage - Forward (Vf) (Max) @ If: 1.11V @ 3000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 150mA @ 1800V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • DZ1100N22KTIMHPSA1
    THYR / DIODE MODULE DK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: BG-PB70AT-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2200V
    • Current - Average Rectified (Io): 1100A
    • Voltage - Forward (Vf) (Max) @ If: 1.11V @ 3000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 80mA @ 2200V
    • Operating Temperature - Junction: 150°C (Max)
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  • DZ1070N22KHPSA3
    DIODE GEN PURP 2.2KV 1100A MOD
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2200V
    • Current - Average Rectified (Io): 1100A
    • Voltage - Forward (Vf) (Max) @ If: 1.11V @ 3000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 150mA @ 2200V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • DZ1100N22KHPSA2
    DIODE GEN PURP 2.2KV 1100A MOD
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2200V
    • Current - Average Rectified (Io): 1100A
    • Voltage - Forward (Vf) (Max) @ If: 1.11V @ 3000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 80mA @ 2200V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • D1131SH65TXPSA1
    DIODE GEN PURP 6.5KV 1100A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AE
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 6500V
    • Current - Average Rectified (Io): 1100A
    • Voltage - Forward (Vf) (Max) @ If: 5.6V @ 2500A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 150mA @ 6500V
    • Operating Temperature - Junction: 0°C ~ 140°C
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