-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDK02G120C5XTMA1 | SIC DISCRETE | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 11.8A (DC) | Silicon Carbide Schottky | Surface Mount | PG-TO263-2-1 | No Recovery Time > 500mA (Io) | 18µA @ 1200V | 182pF @ 1V, 1MHz | 1.65V @ 2A | 1200V | -55°C ~ 175°C | CoolSiC™+ |
- 10
- 15
- 50
- 100