|
IDK10G65C5XTMA1
|
DIODE SCHOTTKY 650V 10A TO263-2 |
Infineon Technologies |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO263-2 |
No Recovery Time > 500mA (Io) |
1.7mA @ 650V |
300pF @ 1V, 1MHz |
1.8V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10S120AKSA1
|
DIODE SCHOTTKY 1200V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
240µA @ 1200V |
500pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDW10G65C5XKSA1
|
DIODE SCHOTTKY 650V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10S60CAKSA1
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
140µA @ 600V |
480pF @ 1V, 1MHz |
1.7V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10SG60CXKSA2
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10G65C5XKSA2
|
DIODE SCHOTKY 650V 10A TO220-2-1 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDK10G65C5XTMA2
|
DIODE SCHOTTKY 650V 10A TO263-2 |
Infineon Technologies |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO263-2 |
No Recovery Time > 500mA (Io) |
|
300pF @ 1V, 1MHz |
1.8V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10G65C5ZXKSA1
|
DIODE SCHOTTKY 650V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC06D60E6X1SA4
|
DIODE SWITCHING 600V WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
IDD10SG60CXTMA1
|
DIODE SCHOTTKY 600V 10A TO252-3 |
Infineon Technologies |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO252-3 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10G65C5XKSA1
|
DIODE SCHOTTKY 650V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
340µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10G120C5XKSA1
|
DIODE SCHOT 1200V 10A TO220-2-1 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
62µA @ 1200V |
525pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10SG60CXKSA1
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC03D60C8X1SA2
|
DIODE SWITCHING 600V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.95V @ 10A |
600V |
|
-40°C ~ 175°C |
|
|
SIDC06D60E6X7SA1
|
DIODE SWITCHING 600V WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|