Semiconductors, Diodes, Diodes - Rectifiers - Arrays Infineon Technologies 10A (DC)

Found: 35
  • DIODE SCHOTTKY 650V 10A TO263-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 1.7mA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 1200V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 240µA @ 1200V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 650V 10A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 180µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 600V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 140µA @ 600V
    • Capacitance @ Vr, F: 480pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 600V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-1
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 90µA @ 600V
    • Capacitance @ Vr, F: 290pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTKY 650V 10A TO220-2-1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-1
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 180µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 650V 10A TO263-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 650V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 180µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 600V 10A TO252-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 90µA @ 600V
    • Capacitance @ Vr, F: 290pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 650V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 340µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOT 1200V 10A TO220-2-1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-1
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 62µA @ 1200V
    • Capacitance @ Vr, F: 525pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SCHOTTKY 600V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 90µA @ 600V
    • Capacitance @ Vr, F: 290pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SWITCHING 600V 10A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 10A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock: