- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAT5403WE6327HTSA1 | DIODE SCHOT 30V 200MA SOD323-2 | Infineon Technologies | SC-76, SOD-323 | 200mA (DC) | Schottky | Surface Mount | PG-SOD323-2 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 25V | 10pF @ 1V, 1MHz | 800mV @ 100mA | 30V | 5ns | 150°C (Max) | |||
| IDH15S120AKSA1 | DIODE SCHOTTKY 1200V 15A TO220-2 | Infineon Technologies | TO-220-2 | 15A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 360µA @ 1200V | 750pF @ 1V, 1MHz | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| D650N08TXPSA1 | DIODE GEN PURP 800V 650A | Infineon Technologies | DO-200AA, A-PUK | 650A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 800V | 950mV @ 450A | 800V | -40°C ~ 180°C | ||||||
| IDP23011XUMA1 | AC/DC DIGITAL PLATFORM | Infineon Technologies | |||||||||||||||
| SIDC03D60F6X1SA2 | DIODE GEN PURP 600V 6A WAFER | Infineon Technologies | Die | 6A (DC) | Standard | Surface Mount | Sawn on foil | Fast Recovery =< 500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 6A | 600V | -40°C ~ 150°C | |||||
| IDB30E60ATMA1 | DIODE GEN PURP 600V 52.3A TO263 | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 52.3A (DC) | Standard | Surface Mount | PG-TO263-3-2 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2V @ 30A | 600V | 126ns | -40°C ~ 175°C | ||||
| D690S20TXPSA1 | DIODE GEN PURP 2KV 690A | Infineon Technologies | DO-200AB, B-PUK | 690A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 25mA @ 2000V | 2.7V @ 3000A | 2000V | 9µs | -40°C ~ 150°C | |||||
| BAS7004E6433HTMA1 | DIODE ARRAY SCHOTTKY 70V SOT23 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 15mA | 70V | 100ps | 150°C (Max) | 1 Pair Series Connection | 70mA (DC) | |||
| DD230S18KHPSA1 | DIODE ARRAY MOD 2900V 350A | Infineon Technologies | DD230S | ||||||||||||||
| D1800N43TVFXPSA1 | DIODE GEN PURP 4.3KV 1800A | Infineon Technologies | DO-200AC, K-PUK | 1800A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 4300V | 1.32V @ 1500A | 4300V | -40°C ~ 160°C | ||||||
| SIDC23D120E6X1SA1 | DIODE GEN PURP 1.2KV 25A WAFER | Infineon Technologies | Die | 25A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.9V @ 25A | 1200V | -55°C ~ 150°C | |||||
| IDC40S120C5X7SA1 | SIC CHIP | Infineon Technologies | |||||||||||||||
| D452N12EVFXPSA1 | DIODE GEN PURP 1.2KV 450A FL54 | Infineon Technologies | Nonstandard | 450A | Standard | Screw Mount | FL54 | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 1200V | 1200V | -40°C ~ 180°C | ||||||
| BAS4005E6433HTMA1 | DIODE ARRAY SCHOTTKY 40V SOT23 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 30V | 1V @ 40mA | 40V | 100ps | 150°C (Max) | 1 Pair Common Cathode | 120mA (DC) | |||
| D1230N16TXPSA1 | DIODE GEN PURP 1.6KV 1230A | Infineon Technologies | DO-200AA, A-PUK | 1230A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 1600V | 1.063V @ 800A | 1600V | -40°C ~ 180°C |
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