• Manufacturer
  • Current - Average Rectified (Io)
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1337
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
Series
IDC28D120T6MX1SA2 DIODE GEN PURP 1.2KV 50A WAFER Infineon Technologies Die 50A Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 10µA @ 1200V 2.05V @ 50A 1200V -40°C ~ 175°C
D1481N60TXPSA1 DIODE GEN PURP 6KV 2200A Infineon Technologies DO-200AC, K-PUK 2200A Standard Chassis Mount Standard Recovery >500ns, > 200mA (Io) 50mA @ 6000V 1.8V @ 2500A 6000V -40°C ~ 160°C
IRD3CH16DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies
D711N65TXPSA1 DIODE GEN PURP 6.5KV 1070A Infineon Technologies DO-200AB, B-PUK 1070A Standard Chassis Mount Standard Recovery >500ns, > 200mA (Io) 50mA @ 6500V 1.9V @ 1200A 6500V -40°C ~ 160°C
IDV04S60CXKSA1 DIODE SCHOTTKY 600V 4A TO220-2FP Infineon Technologies TO-220-2 Full Pack 4A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2 Full Pack No Recovery Time > 500mA (Io) 50µA @ 600V 130pF @ 1V, 1MHz 1.9V @ 4A 600V 0ns -55°C ~ 175°C CoolSiC™+
IDD06E60BUMA1 DIODE GEN PURP 600V 14.7A TO252 Infineon Technologies TO-252-3, DPak (2 Leads + Tab), SC-63 14.7A (DC) Standard Surface Mount PG-TO252-3-1 Fast Recovery =< 500ns, > 200mA (Io) 50µA @ 600V 2V @ 6A 600V 70ns -55°C ~ 175°C
BAS 40-05 B5003 DIODE ARRAY SCHOTTKY 40V SOT23 Infineon Technologies TO-236-3, SC-59, SOT-23-3 Schottky Surface Mount PG-SOT23 Small Signal =< 200mA (Io), Any Speed 1µA @ 30V 1V @ 40mA 40V 100ps 150°C (Max) 1 Pair Common Cathode 120mA (DC)
DD540N26KHPSA1 DIODE MODULE GP 2600V 540A Infineon Technologies Module Standard Chassis Mount Module Standard Recovery >500ns, > 200mA (Io) 40mA @ 2600V 1.48V @ 1700A 2600V -40°C ~ 150°C 1 Pair Series Connection 540A
IDV06S60C RECTIFIER DIODE, SCHOTTKY Infineon Technologies
D711N60TXPSA1 DIODE GEN PURP 6KV 1070A Infineon Technologies DO-200AB, B-PUK 1070A Standard Chassis Mount Standard Recovery >500ns, > 200mA (Io) 50mA @ 6000V 1.9V @ 1200A 6000V -40°C ~ 160°C
BAS28E6433HTMA1 DIODE ARRAY GP 80V 200MA SOT143 Infineon Technologies TO-253-4, TO-253AA Standard Surface Mount PG-SOT-143-3D Small Signal =< 200mA (Io), Any Speed 100nA @ 75V 1.25V @ 150mA 80V 4ns 150°C (Max) 2 Independent 200mA (DC)
ND104N18KHPSA1 DIODE GP 1.8KV 104A BG-PB20-1 Infineon Technologies Module 104A Standard Chassis Mount BG-PB20-1 Standard Recovery >500ns, > 200mA (Io) 20mA @ 1800V 1800V -40°C ~ 135°C
IDFW60C65D1XKSA1 DIODE ARRAY GP 650V 56A TO247-3 Infineon Technologies TO-247-3 Standard Through Hole PG-TO247-3-AI Fast Recovery =< 500ns, > 200mA (Io) 40µA @ 650V 1.75V @ 30A 650V 112ns -40°C ~ 175°C 1 Pair Common Cathode 56A (DC)
SIDC06D60F6X1SA4 DIODE SWITCHING 600V WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.6V @ 15A 600V -40°C ~ 175°C
IDY15S120XKSA1 DIODE SCHOTTKY 1.2KV 7.5A TO247 Infineon Technologies TO-247-3 Variant 7.5A (DC) Silicon Carbide Schottky Through Hole PG-TO247HC-3 No Recovery Time > 500mA (Io) 180µA @ 1200V 375pF @ 1V, 1MHz 1.8V @ 10A 1200V 0ns -55°C ~ 150°C CoolSiC™+
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