• Manufacturer
  • Current - Average Rectified (Io)
Found: 1337
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
Series
SIDC14D60E6X1SA3 DIODE SWITCHING 600V WAFER Infineon Technologies Die 30A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.25V @ 30A 600V -55°C ~ 150°C
DD171N16KHPSA2 DIODE Infineon Technologies Module Standard Chassis Mount Standard Recovery >500ns, > 200mA (Io) 20mA @ 1600V 1.26V @ 500A 1600V 150°C 1 Pair Series Connection 171A DD171N
DD89N14KHPSA1 DIODE MODULE GP 1400V 89A Infineon Technologies Module Standard Chassis Mount Module Standard Recovery >500ns, > 200mA (Io) 20mA @ 1400V 1.5V @ 300A 1400V -40°C ~ 150°C 1 Pair Common Cathode 89A
ND350N12KHPSA1 DIODE GP 1.2KV 350A BG-PB50ND-1 Infineon Technologies Module 350A Standard Chassis Mount BG-PB50ND-1 Standard Recovery >500ns, > 200mA (Io) 30mA @ 1200V 1200V -40°C ~ 135°C
BAT1502LSE6433XTMA1 DIODE SCHOTTKY 4V 110MA TSSLP-2 Infineon Technologies 0201 (0603 Metric) 110mA (DC) Schottky Surface Mount PG-TSSLP-2-3 Small Signal =< 200mA (Io), Any Speed 5µA @ 1V 350pF @ 0V, 1MHz 410mV @ 10mA 4V -55°C ~ 150°C
IRD3CH5BD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies
D1381S45TXPSA1 DIODE GEN PURP 4.5KV 1630A Infineon Technologies DO-200AD 1630A Standard Chassis Mount Standard Recovery >500ns, > 200mA (Io) 100mA @ 4500V 2.6V @ 2500A 4500V -40°C ~ 140°C
BAS 16-02V E6327 DIODE GEN PURP 80V 200MA SC79-2 Infineon Technologies SC-79, SOD-523 200mA (DC) Standard Surface Mount PG-SC79-2 Small Signal =< 200mA (Io), Any Speed 1µA @ 75V 2pF @ 0V, 1MHz 1.25V @ 150mA 80V 4ns 150°C (Max)
IDW40G65C5B IDW40G65 - COOLSIC SCHOTTKY DIOD Infineon Technologies TO-247-3 Silicon Carbide Schottky Through Hole PG-TO247-3-41 No Recovery Time > 500mA (Io) 210µA @ 650V 1.7V @ 20A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 20A (DC)
D2450N07TXPSA1 DIODE GEN PURP 700V 2450A Infineon Technologies DO-200AB, B-PUK 2450A Standard Chassis Mount Standard Recovery >500ns, > 200mA (Io) 50mA @ 700V 880mV @ 2000A 700V -40°C ~ 180°C
AIDW30E60 DIODE GEN PURP 600V 30A TO247-3 Infineon Technologies
IDH12G65C6XKSA1 DIODE SCHOTTKY 650V 27A TO220-2 Infineon Technologies TO-220-2 27A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2 No Recovery Time > 500mA (Io) 40µA @ 420V 594pF @ 1V, 1MHz 1.35V @ 12A 650V 0ns -55°C ~ 175°C
BAS125-04WE6327 RECTIFIER DIODE, SCHOTTKY Infineon Technologies SC-70, SOT-323 Schottky Surface Mount PG-SOT323-3 Small Signal =< 200mA (Io), Any Speed 150nA @ 25V 950mV @ 35mA 25V 150°C 1 Pair Series Connection 100mA (DC)
BAT6404E6327 RECTIFIER DIODE, SCHOTTKY Infineon Technologies TO-236-3, SC-59, SOT-23-3 Schottky Surface Mount PG-SOT23 Small Signal =< 200mA (Io), Any Speed 2µA @ 30V 750mV @ 100mA 40V 5ns 150°C (Max) 1 Pair Series Connection 120mA
IDH02SG120XKSA1 DIODE SCHOTTKY 1200V 2A TO220-2 Infineon Technologies TO-220-2 2A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 48µA @ 1200V 125pF @ 1V, 1MHz 1.8V @ 2A 1200V 0ns -55°C ~ 175°C CoolSiC™+