- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Series: DD171N
- Mounting Type: Chassis Mount
- Package / Case: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1600V
- Operating Temperature - Junction: 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 171A
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1400V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 89A
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 350A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 135°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: PG-TSSLP-2-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 4V
- Current - Average Rectified (Io): 110mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Current - Reverse Leakage @ Vr: 5µA @ 1V
- Capacitance @ Vr, F: 350pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500V
- Current - Average Rectified (Io): 1630A
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 2500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100mA @ 4500V
- Operating Temperature - Junction: -40°C ~ 140°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 210µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 20A (DC)
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 700V
- Current - Average Rectified (Io): 2450A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 2000A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 50mA @ 700V
- Operating Temperature - Junction: -40°C ~ 180°C
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 27A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 420V
- Capacitance @ Vr, F: 594pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 35mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Current - Reverse Leakage @ Vr: 150nA @ 25V
- Operating Temperature - Junction: 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 100mA (DC)
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 30V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 120mA
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 48µA @ 1200V
- Capacitance @ Vr, F: 125pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Offers in stock:
- 10
- 15
- 50
- 100