- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SDT06S60 | DIODE SCHOTTKY 600V 6A TO220-2 | Infineon Technologies | TO-220-2 | 6A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 200µA @ 600V | 300pF @ 0V, 1MHz | 1.7V @ 6A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| DD89N08KKHPSA1 | DIODE ARRAY MOD 1200V 140A | Infineon Technologies | |||||||||||||||
| IDL02G65C5XUMA1 | DIODE SCHOTTKY 650V 2A VSON-4 | Infineon Technologies | 4-PowerTSFN | 2A (DC) | Silicon Carbide Schottky | Surface Mount | PG-VSON-4 | No Recovery Time > 500mA (Io) | 35µA @ 650V | 70pF @ 1V, 1MHz | 1.7V @ 2A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| SIDC04D60F6X1SA3 | DIODE GEN PURP 600V 9A WAFER | Infineon Technologies | Die | 9A (DC) | Standard | Surface Mount | Sawn on foil | Fast Recovery =< 500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 9A | 600V | -40°C ~ 150°C | |||||
| BAS4005WH6327XTSA1 | DIODE ARRAY SCHOTTKY 40V SOT323 | Infineon Technologies | SC-70, SOT-323 | Schottky | Surface Mount | PG-SOT323 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 30V | 1V @ 40mA | 40V | 100ps | 150°C (Max) | 1 Pair Common Cathode | 120mA (DC) | |||
| BAW79DH6327XTSA1 | DIODE GP 400V 500MA SOT89 | Infineon Technologies | TO-243AA | Standard | Surface Mount | PG-SOT89 | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 400V | 1.6V @ 1A | 400V | 1µs | 150°C (Max) | 1 Pair Common Cathode | 500mA | Automotive, AEC-Q101 | ||
| DD500S33HE3 | DD500S33 - RECTIFIER DIODE MODUL | Infineon Technologies | |||||||||||||||
| BAS70-5 | SCHOTTKY DIODE | Infineon Technologies | |||||||||||||||
| IDK10G65C5XTMA1 | DIODE SCHOTTKY 650V 10A TO263-2 | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Silicon Carbide Schottky | Surface Mount | PG-TO263-2 | No Recovery Time > 500mA (Io) | 1.7mA @ 650V | 300pF @ 1V, 1MHz | 1.8V @ 10A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| DD89N08KHPSA1 | DIODE ARRAY MOD 1200V 140A | Infineon Technologies | |||||||||||||||
| SIDC56D170E6X1SA1 | DIODE GEN PURP 1.7KV 75A WAFER | Infineon Technologies | Die | 75A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1700V | 2.15V @ 75A | 1700V | -40°C ~ 150°C | |||||
| IDH16G65C5XKSA2 | DIODE SCHOTKY 650V 16A TO220-2-1 | Infineon Technologies | TO-220-2 | 16A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-1 | No Recovery Time > 500mA (Io) | 200µA @ 650V | 470pF @ 1V, 1MHz | 1.7V @ 16A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| D1230N18TXPSA1 | DIODE GEN PURP 1.8KV 1230A | Infineon Technologies | DO-200AA, A-PUK | 1230A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 1800V | 1.063V @ 800A | 1800V | -40°C ~ 180°C | ||||||
| BAS1602VH6327XTSA1 | DIODE GEN PURP 80V 200MA SC79-2 | Infineon Technologies | SC-79, SOD-523 | 200mA (DC) | Standard | Surface Mount | PG-SC79-2 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 75V | 2pF @ 0V, 1MHz | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | |||
| D251N20BXPSA1 | DIODE GEN PURP 2KV 255A | Infineon Technologies | DO-205AA, DO-8, Stud | 255A | Standard | Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 2000V | 2000V | -40°C ~ 180°C |
- 10
- 15
- 50
- 100