- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 300pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: PG-VSON-4
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 35µA @ 650V
- Capacitance @ Vr, F: 70pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Operating Temperature - Junction: -40°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 1µA @ 30V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 120mA (DC)
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- Manufacturer: Infineon Technologies
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1µs
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 500mA
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
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-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 1.7mA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 75A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Operating Temperature - Junction: -40°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 16A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 650V
- Capacitance @ Vr, F: 470pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 1230A
- Voltage - Forward (Vf) (Max) @ If: 1.063V @ 800A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 50mA @ 1800V
- Operating Temperature - Junction: -40°C ~ 180°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Infineon Technologies
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 255A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 2000V
- Operating Temperature - Junction: -40°C ~ 180°C
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- Offers in stock:
- 10
- 15
- 50
- 100