- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D1030N22TPRXOSA1 | DIODE BG-D5726K-1 | Infineon Technologies | DO-200AB, B-PUK | 1030A | Standard | Chassis Mount | BG-D5726K-1 | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 2200V | 1.11V @ 1000A | 2200V | 160°C (Max) | |||||
| BAS70-04B5000 | SCHOTTKY DIODE | Infineon Technologies | |||||||||||||||
| D901S45T | DIODE GEN PURP 4.5KV 1225A | Infineon Technologies | DO-200AD | 1225A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 250mA @ 4500V | 3.5V @ 2500A | 4500V | -40°C ~ 125°C | ||||||
| D255K04BXPSA1 | DIODE GEN PURP 400V 255A | Infineon Technologies | DO-205AA, DO-8, Stud | 255A | Standard | Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 400V | 400V | -40°C ~ 180°C | |||||||
| GATELEADRD406XPSA1 | STD THYR/DIODEN DISC | Infineon Technologies | |||||||||||||||
| BAW156E6327HTSA1 | DIODE ARRAY GP 80V 200MA SOT23 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Standard | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 5nA @ 75V | 1.25V @ 150mA | 80V | 1.5µs | 150°C (Max) | 1 Pair Common Anode | 200mA (DC) | |||
| IDW15G120C5BFKSA1 | DIODE SCHOTKY 1200V 24A TO247-3 | Infineon Technologies | TO-247-3 | Silicon Carbide Schottky | Through Hole | PG-TO247-3-41 | Fast Recovery =< 500ns, > 200mA (Io) | 62µA @ 1200V | 1.6V @ 7.5A | 1200V | -55°C ~ 175°C | 1 Pair Common Cathode | 24A (DC) | CoolSiC™+ | |||
| BAS70E6327HTSA1 | DIODE SCHOTTKY 70V 70MA SOT23-3 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | 70mA (DC) | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 2pF @ 0V, 1MHz | 1V @ 15mA | 70V | 100ps | -55°C ~ 125°C | |||
| D1600U45X122XPSA1 | HIGH POWER THYR / DIO | Infineon Technologies | |||||||||||||||
| DD750S65K3NOSA1 | DIODE MODULE GP 6500V AIHV130-6 | Infineon Technologies | Module | Standard | Chassis Mount | A-IHV130-6 | Standard Recovery >500ns, > 200mA (Io) | 1100A @ 3600V | 3.5V @ 750A | 6500V | -50°C ~ 125°C | 2 Independent | |||||
| IDP23E60 | DIODE GEN PURP 600V 41A TO220-2 | Infineon Technologies | TO-220-2 | 41A (DC) | Standard | Through Hole | PG-TO220-2-2 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2V @ 23A | 600V | 120ns | -55°C ~ 175°C | ||||
| IDH10S60CAKSA1 | DIODE SCHOTTKY 600V 10A TO220-2 | Infineon Technologies | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 140µA @ 600V | 480pF @ 1V, 1MHz | 1.7V @ 10A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| DD435N36KHPSA1 | DIODE MODULE GP 3600V 573A | Infineon Technologies | Module | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 3600V | 1.71V @ 1200A | 3600V | -40°C ~ 150°C | 1 Pair Series Connection | 573A | ||||
| BAR67-04E6327 | PIN DIODE, 150V V(BR) | Infineon Technologies | |||||||||||||||
| BAS 3005A-02V E6327 | DIODE SCHOTTKY 30V 500MA SC79-2 | Infineon Technologies | SC-79, SOD-523 | 500mA (DC) | Schottky | Surface Mount | PG-SC79-2 | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 30V | 15pF @ 5V, 1MHz | 500mV @ 500mA | 30V | -55°C ~ 125°C |
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