• Manufacturer
  • Current - Average Rectified (Io)
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G3S17005A SIC SCHOTTKY DIODE 1700V 5A 2-PI Global Power Technology-GPT TO-220-2 28A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1700V 800pF @ 0V, 1MHz 1.7V @ 5A 1700V 0ns -55°C ~ 175°C
G4S06506HT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 9.7A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.8V @ 6A 650V 0ns -55°C ~ 175°C
G4S6508Z SIC SCHOTTKY DIODE 650V 8A DFN5* Global Power Technology-GPT 8-PowerTDFN 30.5A (DC) Silicon Carbide Schottky Surface Mount 8-DFN (4.9x5.75) No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G3S17010B SIC SCHOTTKY DIODE 1700V 10A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1700V 1.7V @ 5A 1700V 0ns -55°C ~ 175°C 1 Pair Common Cathode 29.5A (DC)
G3S06530A SIC SCHOTTKY DIODE 650V 30A 2-PI Global Power Technology-GPT TO-220-2 110A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 2150pF @ 0V, 1MHz 1.7V @ 30A 650V 0ns -55°C ~ 175°C
G4S12020D SIC SCHOTTKY DIODE 1200V 20A 2-P Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 75A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 2600pF @ 0V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
G5S12020PM SIC SCHOTTKY DIODE 1200V 20A 2-P Global Power Technology-GPT TO-247-2 62A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1320pF @ 0V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
G3S06503D SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S06505C SIC SCHOTTKY DIODE 650V 5A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 22.6A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 5A 650V 0ns -55°C ~ 175°C
G3S12010C SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 33.2A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 1200V 765pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G3S12020P SIC SCHOTTKY DIODE 1200V 20A 2-P Global Power Technology-GPT TO-247-2 64.5A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 2600pF @ 0V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
G5S06520AT SIC SCHOTTKY DIODE 650V 20A 2-PI Global Power Technology-GPT TO-220-2 68.8A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 1600pF @ 0V, 1MHz 1.5V @ 20A 650V 0ns -55°C ~ 175°C
G3S06510M SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 21A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S06508C SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 25.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G4S06508AT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 24.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
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