• Manufacturer
  • Current - Average Rectified (Io)
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G3S06503C SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S12002H SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 7.3A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 136pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G3S06506B SIC SCHOTTKY DIODE 650V 6A 3-PIN Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 3A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 14A (DC)
G5S12008A SIC SCHOTTKY DIODE 1200V 8A 2-PI Global Power Technology-GPT TO-220-2 24.8A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 550pF @ 0V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
G4S06508CT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 24A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G3S06506A SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 22.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
G5S06510CT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 35.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.5V @ 10A 650V 0ns -55°C ~ 175°C
G5S06510AT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-220-2 36A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.5V @ 10A 650V 0ns -55°C ~ 175°C
G5S12016B SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 8A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 27.9A (DC)
G3S12002A SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 7A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 136pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G3S06508B SIC SCHOTTKY DIODE 650V 8A 3-PIN Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 8A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 14A (DC)
G5S12008PM SIC SCHOTTKY DIODE 1200V 8A 2-PI Global Power Technology-GPT TO-247-2 27.9A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 550pF @ 0V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
G5S12010BM SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 5A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 19.35A (DC)
G3S12010D SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 33.2A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 765pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G5S12005D SIC SCHOTTKY DIODE 1200V 5A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 21A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 424pF @ 0V, 1MHz 1.7V @ 5A 1200V 0ns -55°C ~ 175°C
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