G4S06510QT
|
SIC SCHOTTKY DIODE 650V 10A DFN8 |
Global Power Technology-GPT |
4-PowerTSFN |
44.9A (DC) |
Silicon Carbide Schottky |
Surface Mount |
4-DFN (8x8) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
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|
G5S12010D
|
SIC SCHOTTKY DIODE 1200V 10A 2-P |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
30.9A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
825pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
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|
G5S06502AT
|
SIC SCHOTTKY DIODE 650V 2A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
9.6A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
124pF @ 0V, 1MHz |
1.5V @ 2A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G5S12002A
|
SIC SCHOTTKY DIODE 1200V 2A 2-PI |
Global Power Technology-GPT |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
170pF @ 0V, 1MHz |
1.7V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G5S12020H
|
SIC SCHOTTKY DIODE 1200V 20A 2-P |
Global Power Technology-GPT |
TO-220-2 Full Pack |
24.6A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
1320pF @ 0V, 1MHz |
1.7V @ 20A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G3S06506H
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology-GPT |
TO-220-2 Full Pack |
15.4A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
424pF @ 0V, 1MHz |
1.7V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
GAS06520D
|
SIC SCHOTTKY DIODE 650V 20A 2-PI |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
79.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
1390pF @ 0V, 1MHz |
1.7V @ 20A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06506D
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
22.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
424pF @ 0V, 1MHz |
1.7V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G4S06506AT
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
11.6A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.8V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G5S12005A
|
SIC SCHOTTKY DIODE 1200V 5A 2-PI |
Global Power Technology-GPT |
TO-220-2 |
20.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
424pF @ 0V, 1MHz |
1.7V @ 5A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G3S12003A
|
SIC SCHOTTKY DIODE 1200V 3A 2-PI |
Global Power Technology-GPT |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
100µA @ 1200V |
260pF @ 0V, 1MHz |
1.7V @ 3A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G5S12040BM
|
SIC SCHOTTKY DIODE 1200V 40A 3-P |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
|
1.7V @ 20A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
62A (DC) |
G3S06510C
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
34A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
690pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G4S06510DT
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
32A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503A
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
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