Found: 3
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650V 8A SIC SBD GEN1.5
onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK-2 (TO-263-2)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10.1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 336pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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650V 8A SIC SBD GEN1.5
onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK-2 (TO-263-2)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10.1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 336pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Offers in stock:
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SIC DIODE TO220 650V
onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10.1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 336pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock: