-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1N4933 | R-50PRV 1A | NTE Electronics, Inc | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 1.2V @ 1A | 50V | 300ns | -65°C ~ 150°C |
1N4004 | R-SI 400V 1A | NTE Electronics, Inc | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 400V | 1.1V @ 1A | 400V | 2µs | -55°C ~ 150°C |
1N4007 | R-SI 1000V 1A | NTE Electronics, Inc | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 1000V | 1.1V @ 1A | 1000V | 2µs | -55°C ~ 150°C |
1N4006 | R-SI 800V 1A | NTE Electronics, Inc | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 800V | 1.1V @ 1A | 800V | 2µs | -55°C ~ 150°C |
1N4002 | R-SI 100V 1A | NTE Electronics, Inc | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 100V | 1.1V @ 1A | 100V | 2µs | -55°C ~ 150°C |
1N4005 | R-SI 600V 1A | NTE Electronics, Inc | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 600V | 1.1V @ 1A | 600V | 2µs | -55°C ~ 150°C |
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