Semiconductors, Diodes NTE Electronics, Inc DO-41

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 6
  • 1N4933
    R-50PRV 1A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 300ns
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N4004
    R-SI 400V 1A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 400V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • 1N4007
    R-SI 1000V 1A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 1000V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • 1N4006
    R-SI 800V 1A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 800V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • 1N4002
    R-SI 100V 1A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • 1N4005
    R-SI 600V 1A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AL, DO-41, Axial
    • Supplier Device Package: DO-41
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 2µs
    • Current - Reverse Leakage @ Vr: 5µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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