-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
1N6701US | DIODE SCHOTTKY 30V 5A D5C | Microchip Technology | SQ-MELF, C | 5A | Schottky | Surface Mount | D-5C | Fast Recovery =< 500ns, > 200mA (Io) | 200µA @ 30V | 470mV @ 5A | 30V | -65°C ~ 125°C |
1N6700US | DIODE SCHOTTKY 20V 5A D5C | Microchip Technology | SQ-MELF, C | 5A | Schottky | Surface Mount | D-5C | Fast Recovery =< 500ns, > 200mA (Io) | 200µA @ 20V | 470mV @ 5A | 20V | -65°C ~ 125°C |
- 10
- 15
- 50
- 100