-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MV31011-P00 | GAAS TVAR NON HERMETIC CHIP | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 175°C | 0.5pF @ 4V, 1MHz | 5.5 | C2/C20 | 4000 @ 4V, 50MHz | ||||||||||
MV31026-150A/TR | GAAS TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 175°C | 10pF @ 4V, 1MHz | 13.1 | C2/C20 | 1500 @ 4V, 50MHz | ||||||||||
MV21003-150A/TR | GAAS TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 30V | Single | Surface Mount | Chip | -55°C ~ 175°C | 0.5pF @ 4V, 1MHz | 3.4 | C0/C30 | 7000 @ 4V, 50MHz | ||||||||||
GC4722-150A/TR | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 120V | PIN - Single | Chip | -55°C ~ 150°C | 0.3pF @ 6V, 1MHz | 10W | 1Ohm @ 10mA, 100MHz | ||||||||||||
GC9704-00 | SI SCHOTTKY NON HERMETIC CHIP | Microchip Technology | Die | 10mA (DC) | Schottky | Surface Mount | Chip | Small Signal =< 200mA (Io), Any Speed | 100nA @ 1V | 0.8pF @ 0V, 1MHz | 600 mV @ 1 mA | 5V | -55°C ~ 150°C | |||||||||
MV39002-P2715 | GAAS TVAR NON HERMETIC FLIP CHIP | Microchip Technology | Die | 18V | Single | Surface Mount | Chip | -65°C ~ 150°C | 0.4pF @ 4V, 1MHz | 5.3 | C2/C12 | 4000 @ 4V, 50MHz | ||||||||||
MS8150-P2613 | GAAS SCHOTTKY NON HERMETIC FLIP | Microchip Technology | Die | 3V | PIN - Single | Chip | -55°C ~ 125°C | 15mA | ||||||||||||||
GC4732-00 | SI LIMITER NON HERMETIC CHIP | Microchip Technology | Die | 15V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 3W | 1.5Ohm @ 10mA, 100MHz | ||||||||||||
GC1502-00 | SI TVAR NON HERMETIC CHIP | Microchip Technology | Die | 30V | Single | Surface Mount | Chip | -55°C ~ 125°C | 1.2pF @ 4V, 1MHz | 3.4 | C0/C30 | 3800 @ 4V, 50MHz | ||||||||||
GC4490-150B | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 750V | PIN - Single | Chip | -55°C ~ 150°C | 50mA | 0.1pF @ 50V, 1MHz | 1.5Ohm @ 100mA, 100MHz | ||||||||||||
GC4310-01 | SI NIP NON HERMETIC CHIP W LEAD | Microchip Technology | Die | 100V | PIN - Single | Chip | -55°C ~ 150°C | 0.06pF @ 10V, 1MHz | 1.5Ohm @ 20mA, 1GHz | |||||||||||||
GC4701-150B | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 20V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 2W | 1.5Ohm @ 10mA, 100MHz | ||||||||||||
GC15007-150A | SI TVAR NON HERMETIC EPSM SMT | Microchip Technology | Die | 22V | Single | Surface Mount | Chip | -55°C ~ 125°C | 0.2pF @ 20V, 1MHz | 13 | C0/C20 | 1000 @ 4V, 50MHz | ||||||||||
GC4732-150A/TR | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 15V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 3W | 1.5Ohm @ 10mA, 100MHz | ||||||||||||
GC4530-01 | SI NIP NON HERMETIC CHIP W LEAD | Microchip Technology | Die | 300V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 50V, 1MHz | 1.5Ohm @ 100mA, 100MHz |
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