• Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 28
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Series
JANTX1N5806URS DIODE GEN PURP 150V 1A APKG Microchip Technology SQ-MELF, A 1A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 150V 25pF @ 10V, 1MHz 875mV @ 1A 150V 25ns -65°C ~ 175°C Military, MIL-PRF-19500/477
JAN1N5806URS DIODE GEN PURP 150V 1A APKG Microchip Technology SQ-MELF, A 1A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 150V 25pF @ 10V, 1MHz 875mV @ 1A 150V 25ns -65°C ~ 175°C Military, MIL-PRF-19500/477
JANTXV1N5804URS DIODE GEN PURP 100V 1A APKG Microchip Technology SQ-MELF, A 1A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 100V 25pF @ 10V, 1MHz 875mV @ 1A 100V 25ns -65°C ~ 175°C Military, MIL-PRF-19500/477
1N6626US DIODE GEN PURP 220V 1.75A A-MELF Microchip Technology SQ-MELF, A 1.75A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 2A 220V 30ns -65°C ~ 150°C
1N6631US DIODE GEN PURP 1.1KV 1.4A A-MELF Microchip Technology SQ-MELF, A 1.4A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1100V 40pF @ 10V, 1MHz 1.4V @ 1.4A 1100V 60ns -65°C ~ 150°C
1N6620US DIODE GEN PURP 220V 1.2A A-MELF Microchip Technology SQ-MELF, A 1.2A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 220V 10pF @ 10V, 1MHz 1.4V @ 1.2A 220V 30ns -65°C ~ 150°C
1N6622US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1.2A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 660V 10pF @ 10V, 1MHz 1.4V @ 1.2A 660V 30ns -65°C ~ 150°C
1N6625US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 1 µA @ 1.1 V 10pF @ 10V, 1MHz 1.75V @ 1A 1.1 V 60ns -65°C ~ 150°C
UES1102SM DIODE GEN PURP 100V 2.5A A-MELF Microchip Technology SQ-MELF, A 2.5A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 100V 3.5pF @ 6V, 1MHz 100V 25ns 150°C (Max)
1N6621US DIODE GEN PURP 440V 1.2A A-MELF Microchip Technology SQ-MELF, A 1.2A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 440V 10pF @ 10V, 1MHz 1.4V @ 1.2A 440V 30ns -65°C ~ 150°C
1N6624US DIODE GEN PURP 990V 1A A-MELF Microchip Technology SQ-MELF, A 1A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 990V 10pF @ 10V, 1MHz 1.55V @ 1A 990V 50ns -65°C ~ 150°C
1N6627US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1.75A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C
1N6623US DIODE GEN PURP 880V 1A A-MELF Microchip Technology SQ-MELF, A 1A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 880V 10pF @ 10V, 1MHz 1.55V @ 1A 880V 50ns -65°C ~ 150°C
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