Diodes Microchip Technology A-MELF

Diodes - RF 0
Diodes - Rectifiers - Arrays 28
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 28

JANTX1N5806URS

DIODE GEN PURP 150V 1A APKG

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JAN1N5806URS

DIODE GEN PURP 150V 1A APKG

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTXV1N5804URS

DIODE GEN PURP 100V 1A APKG

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 100V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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1N6626US

DIODE GEN PURP 220V 1.75A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 220V
- Current - Average Rectified (Io): 1.75A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 2µA @ 220V
- Capacitance @ Vr, F: 40pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6631US

DIODE GEN PURP 1.1KV 1.4A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1100V
- Current - Average Rectified (Io): 1.4A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 4µA @ 1100V
- Capacitance @ Vr, F: 40pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6620US

DIODE GEN PURP 220V 1.2A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 220V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 220V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6622US/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 660V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 660V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6625US/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1.1 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1.1 V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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UES1102SM

DIODE GEN PURP 100V 2.5A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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1N6621US

DIODE GEN PURP 440V 1.2A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 440V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 440V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6624US

DIODE GEN PURP 990V 1A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 990V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 990V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6627US/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 440V
- Current - Average Rectified (Io): 1.75A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 2µA @ 440V
- Capacitance @ Vr, F: 40pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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1N6623US

DIODE GEN PURP 880V 1A A-MELF

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 880V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 880V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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