-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 6A10-T/B | General e Diode R6 1KV 6A | MDD | R-6, Axial | 6A | Standard | Through Hole | R-6 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1000V | 150pF @ 4V, 1MHz | 950mV @ 6A | 1000V | -55°C ~ 150°C | R6 |
| 10A10-T/B | General Diode R6 1KV 10A | MDD | R-6, Axial | 10A | Standard | Through Hole | R-6 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1000V | 150pF @ 4V, 1MHz | 1.1V @ 10A | 1000V | -50°C ~ 150°C | R6 |
- 10
- 15
- 50
- 100