-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FUO22-16N | BRIDGE RECT 3P 1.6KV 28A I4-PAC | IXYS | i4-Pac™-5 | 1.6kV | 28A | Three Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 10µA @ 1600V | 1.62V @ 30A | ||||||||
| FUO22-12N | BRIDGE RECT 3P 1.2KV 28A I4-PAC | IXYS | i4-Pac™-5 | 1.2kV | 28A | Three Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 10µA @ 1200V | 1.62V @ 30A | ||||||||
| FBE22-06N1 | BRIDGE RECT 1P 600V 20A I4-PAC | IXYS | i4-Pac™-5 | 600V | 20A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 60µA @ 600V | 2.13V @ 11A | HiPerFRED²™ | |||||||
| FBS10-06SC | BRIDGE RECT 1P 600V 6.6A I4-PAC | IXYS | ISOPLUSi5-Pak™ | 600V | 6.6A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 600V | |||||||||
| FBO16-12N | BRIDGE RECT 1P 1.2KV 22A I4-PAC | IXYS | i4-Pac™-5 | 1.2kV | 22A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 10µA @ 1200V | 1.43V @ 20A | ||||||||
| FBS10-12SC | BRIDGE RECT 1P 1.2KV 6.6A I4-PAC | IXYS | ISOPLUSi5-Pak™ | 1.2kV | 6.6A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 200µA @ 1200V | 2.1V @ 4A | ||||||||
| FBS16-06SC | BRIDGE RECT 1P 600V 11A I4-PAC | IXYS | ISOPLUSi5-Pak™ | 600V | 11A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 200µA @ 600V | 1.8V @ 6A | ||||||||
| FBO40-12N | BRIDGE RECT 1P 1.2KV 40A I4-PAC | IXYS | i4-Pac™-5 | 1.2kV | 40A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 40µA @ 1200V | 1.17V @ 20A | ||||||||
| FSS100-008A | DIODE ARRAY SCHOTTKY 80V ISOPLUS | IXYS | i4-Pac™-5 (3 Leads) | Schottky | Through Hole | ISOPLUS i4-PAC™ | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 80V | 1V @ 75A | 80V | -55°C ~ 175°C | 1 Pair Series Connection | 90A | |||||||
| FUE30-12N1 | BRIDGE RECT 1P 1.2KV 30A I4-PAC | IXYS | i4-Pac™-5 | 1.2kV | 30A | Single Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 100µA @ 1200V | 2.37V @ 10A | ||||||||
| FUS45-0045B | BRIDGE RECT 3P 45V 45A I4-PAC | IXYS | i4-Pac™-5 | 45V | 45A | Three Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 150°C (TJ) | 5mA @ 45V | 650mV @ 15A | ||||||||
| FUO50-16N | BRIDGE RECT 3P 1.6KV 50A I4-PAC | IXYS | i4-Pac™-5 | 1.6kV | 50A | Three Phase | Through Hole | ISOPLUS i4-PAC™ | Standard | -55°C ~ 175°C (TJ) | 20µA @ 1600V | 1.15V @ 15A | ||||||||
| DHG55I3300FE | POWER DIODE DISCRETES-SONIC I4-P | IXYS | i4-Pac™-5 (2 Leads) | 50A | Standard | Through Hole | ISOPLUS i4-PAC™ | Standard Recovery >500ns, > 200mA (Io) | 100µA @ 3300V | 16pF @ 1.8kV, 1MHz | 3.4V @ 60A | 3300V | 1.65µs | -40°C ~ 150°C |
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