Found: 9
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
DPF30P600HR POWER DIODE DISCRETES-FRED ISOPL IXYS TO-247-3 30A Standard Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 500µA @ 600V 26pF @ 400V, 1MHz 1.62V @ 30A 600V 35ns -55°C ~ 175°C
DMA30P1600HR POWER DIODE DISC-RECTIFIER ISOPL IXYS TO-247-3 30A Standard Through Hole ISO247 Standard Recovery >500ns, > 200mA (Io) 40µA @ 1600V 10pF @ 400V, 1MHz 1.28V @ 30A 1600V -55°C ~ 175°C
DMA10P1600HR POWER DIODE DISC-RECTIFIER ISOPL IXYS TO-247-3 10A Standard Through Hole ISO247 Standard Recovery >500ns, > 200mA (Io) 10µA @ 1600V 4pF @ 400V, 1MHz 1.23V @ 10A 1600V -55°C ~ 175°C
DSA90C200HR DIODE ARRAY SCHOTTKY 200V ISO247 IXYS TO-247-3 Schottky Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 2mA @ 200V 910mV @ 45A 200V -55°C ~ 175°C 1 Pair Common Cathode 45A
DCG35C1200HR POWER DIODE DISC-SCHOTTKY ISOPLU IXYS TO-247-3 18A Schottky Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 200µA @ 1200V 1.5pF @ 0V, 1MHz 1.8V @ 20A 1200V -40°C ~ 150°C
DCG17P1200HR POWER DIODE DISC-SCHOTTKY ISOPLU IXYS TO-247-3 18A Schottky Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 200µA @ 1200V 1500pF @ 0V, 1MHz 1.8V @ 20A 1200V -40°C ~ 150°C
DCG10P1200HR POWER DIODE DISC-SCHOTTKY ISOPLU IXYS TO-247-3 12.5A Schottky Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 250µA @ 1200V 755pF @ 0V, 1MHz 1.8V @ 10A 1200V -40°C ~ 150°C
DCG20C1200HR POWER DIODE DISC-SCHOTTKY ISOPLU IXYS TO-247-3 12.5A Schottky Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 250µA @ 1200V 755pF @ 0V, 1MHz 1.8V @ 10A 1200V -40°C ~ 150°C
DMA10P1200HR POWER DIODE DISC-RECTIFIER ISOPL IXYS TO-247-3 10A Standard Through Hole ISO247 Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 1200V 4pF @ 400V, 1MHz 1.23V @ 10A 1200V -55°C ~ 175°C