Semiconductors, Diodes IXYS i4-PAC™

Found: 3
  • DIODE GEN PURP 2.2KV 30A I4PAC
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-251-2, IPak
    • Supplier Device Package: i4-PAC™
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2200V
    • Current - Average Rectified (Io): 30A
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40µA @ 2200V
    • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE ARRAY GP 1200V 60A I4PAC
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFRED™
    • Mounting Type: Through Hole
    • Package / Case: i4-Pac™-3
    • Supplier Device Package: i4-PAC™
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 2.45V @ 60A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 220ns
    • Current - Reverse Leakage @ Vr: 1mA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 60A
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  • DIODE ARRAY GP 1800V 60A I4PAC
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: i4-Pac™-3
    • Supplier Device Package: i4-PAC™
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1800V
    • Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 230ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1800V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 60A
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