-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IV1D12020T3 | SIC DIODE, 1200V 20A(10A/LEG), T | Inventchip | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 1.8V @ 20A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 30A (DC) |
IV1D12030U3 | SIC DIODE, 1200V 30A(15A/LEG), T | Inventchip | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 80µA @ 1200V | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 44A (DC) |
- 10
- 15
- 50
- 100