• Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
IV1D12015T2 SIC DIODE, 1200V 15A, TO-247-2 Inventchip TO-247-2 44A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 80µA @ 1200V 888pF @ 1V, 1MHz 1.8V @ 15A 1200V 0ns -55°C ~ 175°C
IV1D12040U2 SIC DIODE, 1200V 40A, TO-247-2 Inventchip TO-247-2 Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 200µA @ 1200V 1.8V @ 40A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 102A (DC)
IV1D12010T2 SIC DIODE, 1200V 10A, TO-247-2 Inventchip TO-247-2 30A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 50µA @ 1200V 575pF @ 1V, 1MHz 1.8V @ 10A 1200V 0ns -55°C ~ 175°C (TJ)
IV1D12020T2 SIC DIODE, 1200V 20A, TO-247-2 Inventchip TO-247-2 54A Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 120µA @ 1200V 1114pF @ 1V, 1MHz 1.8V @ 20A 1200V 0ns -55°C ~ 175°C
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  • 100