Semiconductors, Diodes Inventchip TO-247-2

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 4
  • IV1D12015T2
    SIC DIODE, 1200V 15A, TO-247-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 44A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 80µA @ 1200V
    • Capacitance @ Vr, F: 888pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • IV1D12040U2
    SIC DIODE, 1200V 40A, TO-247-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 102A (DC)
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  • IV1D12010T2
    SIC DIODE, 1200V 10A, TO-247-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 30A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 575pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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  • IV1D12020T2
    SIC DIODE, 1200V 20A, TO-247-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 54A
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 120µA @ 1200V
    • Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 10
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