- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IV1D12020T3 | SIC DIODE, 1200V 20A(10A/LEG), T | Inventchip | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 1.8V @ 20A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 30A (DC) | ||
| IV1D12015T2 | SIC DIODE, 1200V 15A, TO-247-2 | Inventchip | TO-247-2 | 44A (DC) | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 80µA @ 1200V | 888pF @ 1V, 1MHz | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| IV1D12040U2 | SIC DIODE, 1200V 40A, TO-247-2 | Inventchip | TO-247-2 | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 200µA @ 1200V | 1.8V @ 40A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 102A (DC) | ||
| IV1D12005O2 | SIC DIODE, 1200V 5A, TO-220-2 | Inventchip | TO-220-2 | 17A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 30µA @ 1200V | 320pF @ 1V, 1MHz | 1.8V @ 5A | 1200V | 0ns | -55°C ~ 175°C | ||
| IV1D06006P3 | SIC DIODE, 650V 6A, DPAK | Inventchip | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16.7A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-3 | No Recovery Time > 500mA (Io) | 10µA @ 650V | 224pF @ 1V, 1MHz | 1.65V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
| IV1D12010T2 | SIC DIODE, 1200V 10A, TO-247-2 | Inventchip | TO-247-2 | 30A (DC) | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 575pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C (TJ) | ||
| IV1D12010O2 | SIC DIODE, 1200V 10A, TO-220-2 | Inventchip | TO-220-2 | 28A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 575pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C (TJ) | ||
| IV1D12020T2 | SIC DIODE, 1200V 20A, TO-247-2 | Inventchip | TO-247-2 | 54A | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 120µA @ 1200V | 1114pF @ 1V, 1MHz | 1.8V @ 20A | 1200V | 0ns | -55°C ~ 175°C | ||
| IV1D12030U3 | SIC DIODE, 1200V 30A(15A/LEG), T | Inventchip | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 80µA @ 1200V | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 44A (DC) | ||
| IV1D06006O2 | SIC DIODE, 650V 6A, TO-220-2 | Inventchip | TO-220-2 | 17.4A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 10µA @ 650V | 212pF @ 1V, 1MHz | 1.65V @ 6A | 650V | 0ns | -55°C ~ 175°C |
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