Semiconductors, Diodes Infineon Technologies BG-PB50ND-1

Diodes - RF 0
Diodes - Rectifiers - Arrays 11
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 11

ND350N12KHPSA1

DIODE GP 1.2KV 350A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 350A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND261N20KHPSA1

DIODE GP 2KV 260A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 260A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 40mA @ 2000V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND260N14KHPSA1

DIODE GP 1.4KV 260A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 260A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 1400V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND260N12KHPSA1

DIODE GP 1.2KV 104A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 104A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND350N16KHPSA1

DIODE GP 1.6KV 350A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 350A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND260N16KHPSA1

DIODE GP 1.6KV 260A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 260A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND261N22KHPSA1

DIODE GP 2.2KV 260A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 260A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 40mA @ 2200V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND261N26KHPSA1

DIODE GP 2.6KV 260A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2600V
- Current - Average Rectified (Io): 260A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 40mA @ 2600V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND242S10KHPSA1

DIODE GP 1KV 261A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 261A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 200mA @ 1000V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND241S14KHPSA1

DIODE GP 1.4KV 261A BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 261A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 200mA @ 1400V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND260N08KHPSA1

DIODE BG-PB50ND-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50ND-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 260A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 800A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 30mA @ 800V
- Operating Temperature - Junction: 150°C (Max)
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