-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
Diode Configuration
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DD800S17H4B2BOSA2 | DIODE MODUL GP 1700V AGIHMB130-1 | Infineon Technologies | Module | Standard | Chassis Mount | AG-IHMB130-1 | Standard Recovery >500ns, > 200mA (Io) | 900A @ 900V | 2.1V @ 800A | 1700V | -40°C ~ 150°C | 2 Independent |
| DD1200S17H4B2BOSA2 | DIODE MODULE 1200V 1200A | Infineon Technologies | Module | Standard | Chassis Mount | AG-IHMB130-1 | Standard Recovery >500ns, > 200mA (Io) | 1250A @ 900V | 2.1V @ 1200A | 1700V | -40°C ~ 150°C | 2 Independent |
- 10
- 15
- 50
- 100