Semiconductors, Diodes Infineon Technologies AG-IHMB130-1
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- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHMB130-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 800A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 900A @ 900V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHMB130-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 1200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1250A @ 900V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100