-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G5S06508DT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 32A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G3S06502D | SIC SCHOTTKY DIODE 650V 2A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 9A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 123pF @ 0V, 1MHz | 1.7V @ 2A | 650V | 0ns | -55°C ~ 175°C |
| G5S06505DT | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 24A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 5A | 650V | 0ns | -55°C ~ 175°C |
| G5S12010D | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 30.9A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 825pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
| GAS06520D | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 79.5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C |
| G3S06506D | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 22.5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 6A | 650V | 0ns | -55°C ~ 175°C |
| G4S06510DT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 32A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| G4S06508DT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 24A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G5S12008D | SIC SCHOTTKY DIODE 1200V 8A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 26.1A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C |
| G3S12010D | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 33.2A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 765pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
| G5S12005D | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 21A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06510D | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 34A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| G3S12002D | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 7A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 136pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06505D | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 22.6A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 650V | 0ns | -55°C ~ 175°C |
| G3S12005D | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 34A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100