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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S12015A | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology-GPT | TO-220-2 | 57A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1700pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C |
| G4S06515AT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology-GPT | TO-220-2 | 36A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C |
| G3S12010A | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-220-2 | 34.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 770pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06508A | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-220-2 | 25.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| GAS06520A | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-220-2 | 66A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C |
| G5S12010A | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-220-2 | 37A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S06520A | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-220-2 | 56.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1170pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C |
| G3S17010A | SIC SCHOTTKY DIODE 1700V 10A 2-P | Global Power Technology-GPT | TO-220-2 | 24A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 100µA @ 1700V | 1500pF @ 0V, 1MHz | 1.7V @ 10A | 1700V | 0ns | -55°C ~ 175°C |
| G5S06502AT | SIC SCHOTTKY DIODE 650V 2A 2-PIN | Global Power Technology-GPT | TO-220-2 | 9.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 124pF @ 0V, 1MHz | 1.5V @ 2A | 650V | 0ns | -55°C ~ 175°C |
| G5S12002A | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology-GPT | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 170pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C |
| G4S06506AT | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology-GPT | TO-220-2 | 11.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.8V @ 6A | 650V | 0ns | -55°C ~ 175°C |
| G5S12005A | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-220-2 | 20.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
| G3S12003A | SIC SCHOTTKY DIODE 1200V 3A 2-PI | Global Power Technology-GPT | TO-220-2 | 12A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 260pF @ 0V, 1MHz | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06503A | SIC SCHOTTKY DIODE 650V 3A 2-PIN | Global Power Technology-GPT | TO-220-2 | 11.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.7V @ 3A | 650V | 0ns | -55°C ~ 175°C |
| G5S06508AT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-220-2 | 30.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C |
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