Semiconductors, Diodes Global Power Technology-GPT TO-220AC

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 36
  • G3S12015A
    SIC SCHOTTKY DIODE 1200V 15A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 57A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 1700pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G4S06515AT
    SIC SCHOTTKY DIODE 650V 15A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 36A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 645pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12010A
    SIC SCHOTTKY DIODE 1200V 10A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 34.8A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 770pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06508A
    SIC SCHOTTKY DIODE 650V 8A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 25.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • GAS06520A
    SIC SCHOTTKY DIODE 650V 20A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 66A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 1390pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S12010A
    SIC SCHOTTKY DIODE 1200V 10A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 37A (DC)
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06520A
    SIC SCHOTTKY DIODE 650V 20A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 56.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S17010A
    SIC SCHOTTKY DIODE 1700V 10A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1700V
    • Current - Average Rectified (Io): 24A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 100µA @ 1700V
    • Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S06502AT
    SIC SCHOTTKY DIODE 650V 2A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 9.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 124pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S12002A
    SIC SCHOTTKY DIODE 1200V 2A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 170pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G4S06506AT
    SIC SCHOTTKY DIODE 650V 6A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S12005A
    SIC SCHOTTKY DIODE 1200V 5A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 20.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12003A
    SIC SCHOTTKY DIODE 1200V 3A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 12A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 100µA @ 1200V
    • Capacitance @ Vr, F: 260pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06503A
    SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S06508AT
    SIC SCHOTTKY DIODE 650V 8A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 30.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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