-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S06510A | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-220-2 | 35A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| G3S06505A | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology-GPT | TO-220-2 | 22.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 650V | 0ns | -55°C ~ 175°C |
| G5S12008A | SIC SCHOTTKY DIODE 1200V 8A 2-PI | Global Power Technology-GPT | TO-220-2 | 24.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06506A | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology-GPT | TO-220-2 | 22.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 6A | 650V | 0ns | -55°C ~ 175°C |
| G5S06510AT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-220-2 | 36A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.5V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| G3S12002A | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology-GPT | TO-220-2 | 7A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 136pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C |
| G5S12015A | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology-GPT | TO-220-2 | 53A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1370pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06504A | SIC SCHOTTKY DIODE 650V 4A 2-PIN | Global Power Technology-GPT | TO-220-2 | 11.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.7V @ 4A | 650V | 0ns | -55°C ~ 175°C |
| G5S06504AT | SIC SCHOTTKY DIODE 650V 4A 2-PIN | Global Power Technology-GPT | TO-220-2 | 11.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.6V @ 4A | 650V | 0ns | -55°C ~ 175°C |
| G3S17005A | SIC SCHOTTKY DIODE 1700V 5A 2-PI | Global Power Technology-GPT | TO-220-2 | 28A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 800pF @ 0V, 1MHz | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C |
| G3S06530A | SIC SCHOTTKY DIODE 650V 30A 2-PI | Global Power Technology-GPT | TO-220-2 | 110A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 2150pF @ 0V, 1MHz | 1.7V @ 30A | 650V | 0ns | -55°C ~ 175°C |
| G5S06520AT | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-220-2 | 68.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1600pF @ 0V, 1MHz | 1.5V @ 20A | 650V | 0ns | -55°C ~ 175°C |
| G4S06508AT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-220-2 | 24.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G5S06505AT | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology-GPT | TO-220-2 | 24.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 5A | 650V | 0ns | -55°C ~ 175°C |
| G3S12005A | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-220-2 | 22A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
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