-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1N5400 | RECTIFIER DIODE | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 50V | 30pF @ 4V, 1MHz | 1.2V @ 3A | 50V | -55°C ~ 150°C | |
1N5403 | RECTIFIER DIODE | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 300V | 30pF @ 4V, 1MHz | 1.2V @ 3A | 300V | -55°C ~ 150°C | |
EGP30K | RECTIFIER DIODE, 3A, 800V, DO-20 | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 800V | 75pF @ 4V, 1MHz | 1.7V @ 3A | 800V | 75ns | -65°C ~ 150°C |
EGP30A | RECTIFIER DIODE, 3A, 50V, DO-201 | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 95pF @ 4V, 1MHz | 950mV @ 3A | 50V | 50ns | -65°C ~ 150°C |
EGP30D | RECTIFIER DIODE, 3A, 200V, DO-20 | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 200V | 95pF @ 4V, 1MHz | 950mV @ 3A | 200V | 50ns | -65°C ~ 150°C |
EGP30C | RECTIFIER DIODE, 3A, 150V, DO-20 | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 150V | 95pF @ 4V, 1MHz | 950mV @ 3A | 150V | 50ns | -65°C ~ 150°C |
EGP30F | RECTIFIER DIODE, 3A, 300V, DO-20 | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 300V | 75pF @ 4V, 1MHz | 1.25V @ 3A | 300V | 50ns | -65°C ~ 150°C |
EGP30B | RECTIFIER DIODE, 3A, 100V, DO-20 | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 100V | 95pF @ 4V, 1MHz | 950mV @ 3A | 100V | 50ns | -65°C ~ 150°C |
1N5400G | RECTIFIER DIODE, 3A, 50V | Fairchild Semiconductor | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 50V | 30pF @ 4V, 1MHz | 980mV @ 3A | 50V | -55°C ~ 150°C |
- 10
- 15
- 50
- 100