Semiconductors, Diodes Comchip Technology 2010

Diodes - RF 0
Diodes - Rectifiers - Arrays 11
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 11

ACGRAT103-HF

DIODE GEN PURP 600V 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ACGRAT102-HF

DIODE GEN PURP 400V 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ACGRAT102L-HF

DIODE GEN PURP 400V 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ACGRAT105L-HF

DIODE GEN PURP 1KV 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ACGRAT104L-HF

DIODE GEN PURP 800V 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ACDBAT360-HF

DIODE SCHOTTKY 60V 3A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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ACGRAT101L-HF

DIODE GEN PURP 200V 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
Info from the market
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- Offers in stock:
ACGRAT103L-HF

DIODE GEN PURP 600V 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ACDBAT3100-HF

DIODE SCHOTTKY 100V 3A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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ACDBAT340-HF

DIODE SCHOTTKY 40V 3A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 125°C
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- Offers in stock:
ACGRAT105-HF

DIODE GEN PURP 1KV 1A 2010

Comchip Technology
- Manufacturer: Comchip Technology
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 2010 (5025 Metric)
- Supplier Device Package: 2010
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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