- Производитель
- Package / Case
- Длина волны
- Активная площадь
- Тип диода
-
- Угол обзора
- Обратное постоянное напряжение (Vr) (Max)
- Color - Enhanced
- Spectral Range
- Responsivity @ nm
- Current - Dark (Typ)
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Вид монтажа
|
Длина волны
|
Активная площадь
|
Тип диода
|
Рабочая температура
|
Response Time
|
Обратное постоянное напряжение (Vr) (Max)
|
Color - Enhanced
|
Responsivity @ nm
|
Current - Dark (Typ)
|
Серия
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FCI-INGAAS-3000-20 | 3.0 MM DIAMETER INGAAS PHOTODIOD | OSI Optoelectronics, Inc. | TO-5 Variant, 3 Leads, Lens Top Metal Can | Through Hole | 3mm² | -40°C ~ 75°C | 2V | 0.9 A/W @ 1310nm, 0.95 A/W @ 1550nm | FCI-InGaAs-XXX-X | |||||
PIN-005D-254F | 2.4X2.4 MM UV ENHANCED NARROW BA | OSI Optoelectronics, Inc. | TO-5 Variant, 2 Leads, Lens Top Metal Can | Through Hole | 254nm | 5.7mm² | Planar Diffusion | 0°C ~ 70°C | 100ns | Ultraviolet (UV) | 0.025 A/W @ 550nm | |||
QD50-0-SD | 8 MM DIAMETER QUADRANT SILICON P | OSI Optoelectronics, Inc. | TO-8 Style, 6 Leads | Through Hole | 900nm | 50mm² | -40°C ~ 100°C | 10ns | 30V | 0.54 A/W @ 900nm | 30nA | O | ||
SPOT-4DUV | 1.3X1.3 MM QUADRANT UV-ENHANCED | OSI Optoelectronics, Inc. | TO-5 Variant, 5 Leads, Lens Top Metal Can | Through Hole | 1.61mm² | -10°C ~ 60°C | 10µs | 5V | 0.1 A/W @ 257nm | SPOT | ||||
A2V-76 | 76-ELEMENT SILICON PHOTODIODE AR | OSI Optoelectronics, Inc. | Array - 76 Element | Through Hole | 970nm | 1.8mm² | Planar Diffusion | -30°C ~ 85°C | 0.50 A/W @ 970nm | Multi-Element Array | ||||
A5C-35 | 35-ELEMENT SILICON PHOTODIODE AR | OSI Optoelectronics, Inc. | Array - 35 Element | Through Hole | 3.9mm² | Planar Diffusion | -30°C ~ 85°C | 0.65 A/W @ 970nm | 50pA | Multi-Element Array | ||||
QD7-0-SD | 3 MM DIAMETER QUADRANT SILICON P | OSI Optoelectronics, Inc. | TO-5 Variant, 5 Leads, Lens Top Metal Can | Through Hole | 900nm | 7mm² | -40°C ~ 100°C | 10ns | 30V | 0.54 A/W @ 900nm | 15nA | O | ||
FCI-INGAAS-1500 | 1.5 MM DIAMETER INGAAS PHOTODIOD | OSI Optoelectronics, Inc. | TO-46-3 Lens Top Metal Can | Through Hole | 1.5mm² | -40°C ~ 75°C | 2V | 0.9 A/W @ 1310nm, 0.95 A/W @ 1550nm | FCI-InGaAs-XXX-X | |||||
OSD60-E | 100 MM SQ. HUMAN EYE RESPONSE SI | OSI Optoelectronics, Inc. | TO-233AA, TO-8-3 Lens Top Metal Can | Through Hole | 100mm² | -25°C ~ 85°C | 15V | Blue | 8nA | E | ||||
SC-10D | 10.16X10.16 MM ACTIVE AREA TETRA | OSI Optoelectronics, Inc. | Radial | Through Hole | 670nm | 103mm² | 0°C ~ 70°C | 1µs | 0.42 A/W @ 670nm | 250nA | ||||
PIN-10DF | 100 MM SQ. 450-950NM FLAT RESPON | OSI Optoelectronics, Inc. | Module | Panel Mount | 100mm² | Planar Diffusion | 0°C ~ 70°C | 0.15 A/W @ 550nm | Photovoltaic | |||||
S-100VL | 9.7X9.7 MM ACTIVE AREA LOW NOISE | OSI Optoelectronics, Inc. | Chip with 30 Gauge PVC Wire | Surface Mount | 970nm | 93.4mm² | Planar Diffusion | 0.65 A/W @ 970nm | Solderable Chip | |||||
S-10VL | 2.3X4.2 MM ACTIVE AREA LOW NOISE | OSI Optoelectronics, Inc. | Chip with 30 Gauge PVC Wire | Free Hanging | 970nm | 9.6mm² | Planar Diffusion | 0.65 A/W @ 970nm | Solderable Chip | |||||
S-100CL | 9.7X9.7 MM ACTIVE AREA HIGH SENS | OSI Optoelectronics, Inc. | Chip with 30 Gauge PVC Wire | Free Hanging | 970nm | 93.4mm² | Planar Diffusion | 0.65 A/W @ 970nm | 600nA (Max) | Solderable Chip | ||||
S-120VL | 4.5X23.5 MM ACTIVE AREA LOW NOIS | OSI Optoelectronics, Inc. | Chip with 30 Gauge PVC Wire | Free Hanging | 970nm | 105.7mm² | Planar Diffusion | 0.65 A/W @ 970nm | Solderable Chip |
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